Role of Hydrogen in Variation of Electrical, Optical and Magnetic Properties of ZnSe-Fe Bilayer Thin Films Structure

Mangej Singh

Abstract


This paper is reporting the role of hydrogen in preparation and characterization of dilute magnetic semiconductor of ZnSe-Fe bilayer thin film structure. These films are hydrogenated at different pressure to see the effect of hydrogen on electrical, optical, magnetic and structural properties of bilayer structure. Optical absorption in thin films is found to be decrease with hydrogen absorption. It may be due to interaction of hydrogen with bilayer structure and takes electron from the conduction band of thin film structure. The current-voltage characteristic of these films shows the variation in conductivity with hydrogenation due to decrease in electron density. Atomic Force Microscopy and scanning electron Microscope recorded to see the surface topography of bilayer thin films. It has been observed that deposited film have nano size structure that is favorable for hydrogen absorption having higher surface to volume ratio. The Electron diffraction X-ray analysis gives the information about composition of films. Raman spectra have used to see the presence of hydrogen. Super-conducting Quantum Interference Device gives the information of confirmation of diluted magnetic semiconductors and variation of magnetic momentum with hydrogenation.

Keywords


Thin film; Atomic Force Microscopy; X-ray diffraction; Scanning electron microscope (SEM); Electron diffraction X-ray analysis (EDAX); Hydrogenation

Full Text:

PDF

References


Banerjee, P., & Ghosh, B. (2008). Optical and electronic properties of nano-Cd1−xMnxTe alloy. Journal of Physics and Chemistry of Solids, 69, 2670-2673.

Bierleutgeb, K., Sitter, H., Krenn, H., & Seyringer, H. (2000). A comparative study of iron films on II–VI and III–V semiconductors. Phys. State. Sol. (B), 220, 41-45.

Brahmam, K., Reddy, D., & Reddy, B. K. (2005). Crystal growth and reflectivity studies of Zn1–xMnxTe crystals. Bull. Master. Sci., 28, 411-414.

Chambers, S. A. (2002). A potential role in spintronics. Material Today, 5, 34-39.

Continenza, A., Massidda, S., & Freeman, A. J. (1990). Metal-semiconductor interfaces: Magnetic and electronic properties and Schottky barrier in Fen/(ZnSe)m (001) superlattices. Physical Review B, 42, 2904-2913.

Daboo, C., Hicken, R. J., Eley, D. E. P., Gester, M., Gray, S. J., Tves, A. J. R., & Bland, J. A. C. (1994). Magnetization reversal processes in epitaxial Fe/GaAs(001) films. J. Appl. Phys., 75, 5586-5588.

Estreicher, S. K. (1995). Hydrogen-related defects in crystalline semiconductors: A theorist’s perspective. Mater. Sci. Eng. R, 14, 319-412.

Hao, X. T., Zhu, F. R., Ong, K. S., & Tan, L.W. (2006). Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes. Semiconductor Science Technology, 21, 48-54.

Kalita, P. K., Sarma, B. K., & Das, H. L. (2000). Structural characterization of vacuum evaporated ZnSe thin films. Bull. Mater. Sci., 23, 313-317.

Kerbs, J. J., Jonker, B. T., & Prinz, G. A. (1987). Magnetic properties of single-crystal Fe films grown on ZnSe epilayers by molecular-beam epitaxy. J. Appl. Phys., 61, 3744-3746.

Kim, M. D., Park, H. S., & Kim, T. W. (1998). Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates. Journal of Applied Physics, 84, 3125-3128.

Kulkova, S. E., Eremeev, S. V., Egorushkin, V. E., Kim, J. S., & Oh, S. Y. (2003). Hydrogen adsorption on Pd/TiFe (110) surface. Solid State Communications, 126, 405-408.

Leitch, A. W. R., Alex, V., & Weber, J. (1998). Raman spectroscopy of hydrogen molecules in crystalline silicon. Phys. Rev. Lett., 81, 421-424.

Liu, X. C., Lin, Y. B., Wang, J. F., Lu, Z. H., Lu, Z. L., Xu, J. P., …, Du, Y. W. (2007). Effect of hydrogenation on the ferromagnetism in polycrystalline Si1−xMnx:B thin films. Journal of Applied Physics, 102, 033902.

Magnetic patterning of (Ga, Mn) as by hydrogen passivation. Applied Physics Letters, 91, 142511-142513.

Meckenstock, R., Spoddiga, D., Himmelbauer, K., Krenn, H., Doic, M., Keune, W., …, Pelzl, J. (2002). Magnetic properties of Fe/ZnSe and Fe/GaAs heterostructures investigated by ferromagnetic resonance and SQUID measurements. Journal of Magnetism and Magnetic Materials, 240, 410-413.

Nehra, S. P., & Singh, M. (2009). Role of hydrogen in CdTe–Mn thin film bilayer structure. Journal of Alloys and Compounds, 488, 356-359.

Nehra, S. P., Jangid, M. K., Srivastava, S., Kumar, A., Tripathi, B., Singh, M., & Vijay. Y. K. (2009). Role of hydrogen in electrical and structural characteristics of bilayer CdTe/Mn diluted magnetic semiconductor thin films. International Journal of Hydrogen Energy, 34, 7306-7310.

Pakhomov, A. B., Roberts, B. K., & Krishnan, K. M. (2003). Transition from granular to dilute magnetic semiconducting multilayers in ion-beam-deposited ZnO/Co. Applied Physics Letter, 83, 43574359.

Pan, F., Song, C., Liu, X. J., Yang, Y. C., & Zeng, F. (2008). Ferromagnetism and possible application in spintronics of transition metal doped ZnO films. Mater. Sci. Eng. R., 62, 1-35.

Pankove, J. I., & Johnson, N. M. (Eds.). (1991). Hydrogen in semiconductors, semiconductors and semimetals (Vol. 34). San Diego: Academic Press.

Park, S. Y., Shin, S. W., Kim, P. J., Kang, J.-H., Kim, T. H., & Lee, Y. P. (2007). A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films. Journal of Magnetism and Magnetic Materials, 310, e708-e710.

Pavesi, L., & Giannozzi, P. (1992). Atomic and molecular hydrogen in gallium arsenide: A theoretical study. Phys. Rev. B, 46(8), 4621-4629.

Pearton, S. J. (1994). Hydrogen in III-V compound semiconductors. Mater. Sci. Forum, 393, 148-149.

Pearton, S. J., Abernathy, C. R., Norton, D. P., Hebard, A. F., Park, Y. D., Boatner, L. A., & Budai, J. D. (2003). Advances in wide bandgap materials for semiconductor spintronics. Mater. Sci. Eng. R., 40, 137-138.

Pearton, S. J., Corbett, J. W., & Stavola, M. (1992). Hydrogen in crystalline semiconductors. Berlin: Springer-Verlag.

Pritchard, R. F., Ashwin, M. J., Tucker, J. H., Newman, R. C., & Lightowlers, E. C. (1996). Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon. Phys. Rev. B, 56, 13116-13125.

Sebastian, T. B., Goennenwein, T. A., Wassner, H. H., & Martin, S. B. (2004). Hydrogen control of ferromagnetism in a dilute magnetic semiconductor. Phys. Rev. Lett., 92, 227202.

Stoicheff, B. P. (1957). High resolution raman spectroscopy of gases. IX. Spectra of H2, HD and D2. Canadian J. Phys., 35, 730.

Thevenard, L., Largeau, L., Mauguin, O., Lemaitre, A., & Theys, B. (2005). Tuning the ferromagnetic properties of hydrogenated GaMnAs. Applied Physics Letters, 87, 182506.

Thevenard, L., Miard, A., Vila, L., Faini, G., Lemaitre, A., Vernier, N., …, Fusil, S. (2007). Magnetic patterning of (Ga, Mn) as by hydrogen passivation. Applied Physics Letters, 91(14), 142511-142513.

Vetterhoffer, J., Wagner, J., & Weber, J. (1996). Isolated hydrogen molecules in GaAs. Phy. Rev. Lett., 77, 5409-5412.




DOI: http://dx.doi.org/10.3968/j.est.1923847920130602.2843

DOI (PDF): http://dx.doi.org/10.3968/g5277

Refbacks

  • There are currently no refbacks.


Copyright (c)



Share us to:   

Reminder

If you have already registered in Journal A and plan to submit article(s) to Journal B, please click the CATEGORIES, or JOURNALS A-Z on the right side of the "HOME".

We only use three mailboxes as follows to deal with issues about paper acceptance, payment and submission of electronic versions of our journals to databases: caooc@hotmail.com; est@cscanada.net; est@cscanada.org

 Articles published in Energy Science and Technology are licensed under Creative Commons Attribution 4.0 (CC-BY).

 ENERGY SCIENCE AND TECHNOLOGY Editorial Office

Address: 1055 Rue Lucien-L'Allier, Unit #772, Montreal, QC H3G 3C4, Canada.
Telephone: 1-514-558 6138 
Website: Http://www.cscanada.net Http://www.cscanada.org 
E-mail: est@cscanada.net; est@cscanada.org

Copyright © 2010 Canadian Research & Development Centre of Sciences and Cultures